15th Dec Semiconductor Quiz 3 – Punjab Meritorious School Preparation Portal

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The ratio of electron and hole currents in a semi- conductor is 7/4 and the ratio of drift velocities of electrons and holes is 5/4, then ratio of concentrations of electrons and holes will be

5/7

7/5

25/49

49/25

The mobility of free electrons is greater than that of free holes because

they are light

they carry negative charge

they mutually collide less

they require low energy to continue their motion

In a p-type semiconductor the acceptor level i situated 60 meV above the valence band. The maximum wavelength of light required to product a hole will be

In a p-type semiconductor the acceptor level i situated 60 meV above the valence band. The maximum wavelength of light required to product a hole will be

In a p-type semiconductor the acceptor level i situated 60 meV above the valence band. The maximum wavelength of light required to product a hole will be

In a p-type semiconductor the acceptor level i situated 60 meV above the valence band. The maximum wavelength of light required to product a hole will be

In a p-type semiconductor the acceptor level i situated 60 meV above the valence band. The maximum wavelength of light required to product a hole will be

The correct relation between ne and nh intrinsic semiconductor at ordinary temperature is in an

The correct relation between ne and nh intrinsic semiconductor at ordinary temperature is in an

The correct relation between ne and nh intrinsic semiconductor at ordinary temperature is in an

The correct relation between ne and nh intrinsic semiconductor at ordinary temperature is in an

The correct relation between ne and nh intrinsic semiconductor at ordinary temperature is in an

The typical ionisation energy of a donar in silicon is

10.0 eV

1.0 eV

0-1 eV

0.001 eV

Resistivity of a semiconductor depends on

shape of semiconductor

atomic nature of semiconductor

length of semiconductor

shape and atomic nature of semiconductor

The energy gap of silicon is 1.14eV. The maxi- mum wavelength at which silicon starts energy absorption, will be

(h = 6.62 × 10^-34 Js; c = 3 × 10⁸ m/s)

10.888 dot Å

108.88 Å

1088.8 Å

10888 Å

On doping germanium with donor atoms of density 10¹⁷ cm^-3 its conductivity in mho/cm will be

[Given µ_e = 3800 cm²/V-s and n_i= 2.5 x 10¹³ cm^-13]

30.4

60.8

91.2

121.6

When boron is added as an impurity to silicon, the resulting material is

n-type conductor

n-type semiconductor

p-type conductor

p-type semiconductor

The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by

The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by

The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by

The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by

The relation between number of free electrons (n) in a semiconductor and temperature (T) is given by

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